[准分子激光扫瞄原位淀积多层铁电薄膜及其相关特性的研究]赵建洪

【准分子激光扫瞄原位淀积多层铁电薄膜及其相关特性的研究】赵建洪.pdfDissertation Submitted for the Ph.DDegree Multilayer Ferroelectric Thin Films Prepared in situ Using Scanning Excimer Laser and Their Characteristics Ph.D.Candidate:Zhao Jianhong Major:ElectronicMaterials and Components Supervisor:Prof.华中理工大学博士学位论文 置电压,8小时后其电容值仅降低了17 7.详细地研究了多层结构铁电薄膜的I-V特性,结果表明,AuBIT/PZT/BIT/p-Si结构铁电薄膜的漏电流密度最小。充分显示了多层铁电薄 膜在FFET中作为栅极绝缘材料的优越性.8.根据不同场强下多层铁电薄膜的I-V特性,详细地研究了多层结构铁电薄 膜在不同场强下漏电流的产生机制,结果表明,多层结构铁电薄膜在低场下主要 是弱指数型电流,1V左右为隧道电流,高场下为有限空间电荷电流.华中理工大学博士学位论文 larger thanthatofone or two-layers,theinterfacestate densities were estimatedfrom theslopeon theC-Vcurves tobe1o/cm2whichissmaller than thatofoneor two- layers.The capacitanceretentioncharacteristics ofC-Vofmultilayer thinfilmswere studied.
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