【高性能非晶硅薄膜晶体管及其有源矩阵的研究】张少强.pdf

THESTUDYOFHIGHPERFORMANCE AMORPHOUSSILICONTHINFILM TRANSISTORSANDITSACTIVEMATRIX by ZhangShaoqiang Supervised by Professor:Li Xingjiao Professor:XuZhongyang ADissertation Submitted totheDegreeEvaluationCommittee of HuazhongUniversity ofScience andTechnology fortheDegreeofDoctorofPhilosophy InElectr

华中理工大学博士学位论文 TFT关断电流的增加。成功研制出导通电流为6X10A,场效应迁移率为 1cm/Vs,关断电流.10A的uc-Si:H/a-Si:HTFT器件.研究了a-Si:HTFT有源矩阵的制造技术。用SPICE电路模拟技术对a-Si:HTFT 有源矩阵的结构进行了优化设计,通过采取了各种有效的,具有创新意义的技术措施和方法,我们成功地研制出高性能的3英寸372X276单元的a-Si:HTFT有源矩阵,a-Si:HTFT的导通电流大于10A,导通电流/关断电流比大于10”,矩阵的开口率大于55 ,液晶封盒以后,实现了彩色视频信号的动态显示。

华中理工大学博士学位论文 Followingthechapter4and5,weresearchedtwonovelstructuretransistorsincluding YO;/a-SiNxmultilayerinsulator andμc-Si:H/a-Si:Hdualactivelayers.TheY2O;films with high dietetics constants were preparedby ArF excimer pulse laser deposition.